HOME > 論文 > 書誌詳細Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy(HVPE法によるα-Ga2O3のELO)Y. Oshima, K. Kawara, T. Shinohe, T. Hitora, M. Kasu, S. Fujita. APL Materials 7 [2] 022503. 2019.https://doi.org/10.1063/1.5051058 Open Access AIP Publishing (Publisher) Materials Data Repository (MDR) NIMS著者大島 祐一Materials Data Repository (MDR)上の本文・データセットMDRavailable Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy 作成時刻: 2019-03-01 12:10:07 +0900更新時刻: 2024-03-31 01:44:16 +0900
