HOME > Article > DetailEpitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy(HVPE法によるα-Ga2O3のELO)Y. Oshima, K. Kawara, T. Shinohe, T. Hitora, M. Kasu, S. Fujita. APL Materials 7 [2] 022503. 2019.https://doi.org/10.1063/1.5051058 Open Access AIP Publishing (Publisher) Materials Data Repository (MDR) NIMS author(s)OSHIMA, YuichiFulltext and dataset(s) on Materials Data Repository (MDR)MDRavailable Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy Created at: 2019-03-01 12:10:07 +0900Updated at: 2024-03-31 01:44:16 +0900