High temperature complementary heterojunction tunnel field-effect transistors for low-power circuits

Dongbeom Goo; Ganghyeok Seo; Hongsik Lim; Uiyeon Won; Jongseok Lee; Taehyeok Jin; Kyunghwan Sung; Taehun Lee; Jinkyu Kim; Seok Lee; Jaehyun Cho; Kenji Watanabe; Takashi Taniguchi; Sungjae Cho; Dongbeom Goo; Ganghyeok Seo; Hongsik Lim; Uiyeon Won; Jongseok Lee; Taehyeok Jin; Kyunghwan Sung; Taehun Lee; Jinkyu Kim; Seok Lee; Jaehyun Cho; Kenji Watanabe; Takashi Taniguchi; Sungjae Cho

doi:10.1063/5.0250755

High temperature complementary heterojunction tunnel field-effect transistors for low-power circuits

Dongbeom Goo, Ganghyeok Seo, Hongsik Lim, Uiyeon Won, Jongseok Lee, Taehyeok Jin, Kyunghwan Sung, Taehun Lee, Jinkyu Kim, Seok Lee, Jaehyun Cho, Kenji Watanabe, Takashi Taniguchi, Sungjae Cho.

Applied Physics Letters 126 [8] 083507. 2025.

https://doi.org/10.1063/5.0250755

NIMS author(s)

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Created at: 2025-03-18 03:06:33 +0900 Updated at: 2026-11-09 09:10:57 +0900