High temperature complementary heterojunction tunnel field-effect transistors for low-power circuits

Dongbeom Goo; Ganghyeok Seo; Hongsik Lim; Uiyeon Won; Jongseok Lee; Taehyeok Jin; Kyunghwan Sung; Taehun Lee; Jinkyu Kim; Seok Lee; Jaehyun Cho; Kenji Watanabe; Takashi Taniguchi; Sungjae Cho; Dongbeom Goo; Ganghyeok Seo; Hongsik Lim; Uiyeon Won; Jongseok Lee; Taehyeok Jin; Kyunghwan Sung; Taehun Lee; Jinkyu Kim; Seok Lee; Jaehyun Cho; Kenji Watanabe; Takashi Taniguchi; Sungjae Cho

doi:10.1063/5.0250755

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High temperature complementary heterojunction tunnel field-effect transistors for low-power circuits

Dongbeom Goo, Ganghyeok Seo, Hongsik Lim, Uiyeon Won, Jongseok Lee, Taehyeok Jin, Kyunghwan Sung, Taehun Lee, Jinkyu Kim, Seok Lee, Jaehyun Cho, Kenji Watanabe, Takashi Taniguchi, Sungjae Cho.

Applied Physics Letters 126 [8] 083507. 2025.

https://doi.org/10.1063/5.0250755

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作成時刻: 2025-03-18 03:06:33 +0900 更新時刻: 2026-10-08 09:09:18 +0900