<i>I-V-T</i> Characteristics and Temperature Sensor Performance of a Fully 2-D WSe<sub>2</sub>/MoS<sub>2</sub> Heterojunction Diode at Cryogenic Temperatures | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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I-V-T Characteristics and Temperature Sensor Performance of a Fully 2-D WSe₂/MoS₂ Heterojunction Diode at Cryogenic Temperatures

Christian D. Matthus, Phanish Chava, Kenji Watanabe, Takashi Taniguchi, Thomas Mikolajick, Manfred Helm, Artur Erbe.

IEEE Journal of the Electron Devices Society 11 359-366. 2023.

https://doi.org/10.1109/jeds.2023.3289758

Open Access Institute of Electrical and Electronics Engineers (IEEE) (Publisher) Materials Data Repository (MDR)

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MDRavailable <i>I-V-T</i> Characteristics and Temperature Sensor Performance of a Fully 2-D WSe<sub>2</sub>/MoS<sub>2</sub> Heterojunction Diode at Cryogenic Temperatures

作成時刻: 2023-07-27 03:26:28 +0900 更新時刻: 2026-09-29 09:36:18 +0900

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