Comparative Study of Charge Trapping Type SOI-FinFET Flash Memories with Different Blocking Layer Materials

Yongxun Liu; Toshihide Nabatame; Takashi Matsukawa; Kazuhiko Endo; Shinichi O'uchi; Junichi Tsukada; Hiromi Yamauchi; Yuki Ishikawa; Wataru Mizubayashi; Yukinori Morita; Shinji Migita; Hiroyuki Ota; Toyohiro Chikyow; Meishoku Masahara

doi:10.3390/jlpea4020153

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Comparative Study of Charge Trapping Type SOI-FinFET Flash Memories with Different Blocking Layer Materials

Yongxun Liu, Toshihide Nabatame, Takashi Matsukawa, Kazuhiko Endo, Shinichi O'uchi, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Wataru Mizubayashi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Toyohiro Chikyow, Meishoku Masahara.

Journal of Low Power Electronics and Applications 4 [2] 153-167. 2014.

https://doi.org/10.3390/jlpea4020153

Open Access MDPI AG (Publisher)

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Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2016-05-24 17:29:53 +0900更新時刻: 2024-03-31 14:00:57 +0900