Comparative Study of Charge Trapping Type SOI-FinFET Flash Memories with Different Blocking Layer Materials

Yongxun Liu; Toshihide Nabatame; Takashi Matsukawa; Kazuhiko Endo; Shinichi O'uchi; Junichi Tsukada; Hiromi Yamauchi; Yuki Ishikawa; Wataru Mizubayashi; Yukinori Morita; Shinji Migita; Hiroyuki Ota; Toyohiro Chikyow; Meishoku Masahara; Yongxun Liu; Toshihide Nabatame; Takashi Matsukawa; Kazuhiko Endo; Shinichi O'uchi; Junichi Tsukada; Hiromi Yamauchi; Yuki Ishikawa; Wataru Mizubayashi; Yukinori Morita; Shinji Migita; Hiroyuki Ota; Toyohiro Chikyow; Meishoku Masahara

doi:10.3390/jlpea4020153

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Comparative Study of Charge Trapping Type SOI-FinFET Flash Memories with Different Blocking Layer Materials

Yongxun Liu, Toshihide Nabatame, Takashi Matsukawa, Kazuhiko Endo, Shinichi O'uchi, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Wataru Mizubayashi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Toyohiro Chikyow, Meishoku Masahara.

Journal of Low Power Electronics and Applications 4 [2] 153-167. 2014.

https://doi.org/10.3390/jlpea4020153

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作成時刻: 2016-05-24 17:29:53 +0900 更新時刻: 2026-09-29 07:07:23 +0900