融液法による酸化ガリウム半導体基板の作製とその特性
(β-Ga2O3 Semiconductor Substrate : Crystal Growth from Melt and Properties)
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2016-05-24 16:54:09 +0900Updated at: 2018-12-15 00:13:48 +0900