HOME > Article > DetailElectrical Characteristics of AlGaAs/GaAs Heterostructures With a Pair of 2-D Electron and Hole ChannelsTomoyoshi Kushida, Masato Ohmori, Shota Osanai, Daisuke Kawamoto, Takeshi Noda, Hiroyuki Sakaki. IEEE Transactions on Electron Devices 62 [11] 3619-3626. 2015.https://doi.org/10.1109/ted.2015.2474735 NIMS author(s)NODA, TakeshiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2016-05-24 17:48:19 +0900 Updated at: 2026-11-04 05:21:40 +0900