HOME > 論文 > 書誌詳細Epitaxial growth mechanism of high-crystallinity lanthanum hexaboride (001) thin films on silicon (001) by electron beam depositionØrjan Sele Handegård, Hai Dang Ngo, Ramu Pasupathi Sugavaneshwar, Tung Anh Doan, Furuhata Naoki, Shigeki Otani, Tadaaki Nagao. Applied Physics Express 13 [5] 055504. 2020.https://doi.org/10.35848/1882-0786/ab8728 NIMS著者長尾 忠昭Materials Data Repository (MDR)上の本文・データセット作成時刻: 2020-12-01 03:00:21 +0900 更新時刻: 2026-04-01 04:29:53 +0900
