Carbon-Rich Domain in Hexagonal Boron Nitride: Carrier Mobility Degradation and Anomalous Bending of the Landau Fan Diagram in Adjacent Graphene | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Carbon-Rich Domain in Hexagonal Boron Nitride: Carrier Mobility Degradation and Anomalous Bending of the Landau Fan Diagram in Adjacent Graphene
(Carbon-rich domain in hexagonal boron nitride: carrier mobility degradation and anomalous bending of Landau fan diagram in adjacent graphene)

Momoko Onodera, Kenji Watanabe, Miyako Isayama, Miho Arai, Satoru Masubuchi, Rai Moriya, Takashi Taniguchi, Tomoki Machida.

Nano Letters 19 [10] 7282-7286. 2019.

https://doi.org/10.1021/acs.nanolett.9b02879

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作成時刻: 2019-10-16 03:00:16 +0900更新時刻: 2024-04-02 01:20:53 +0900

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