Excitonic Linewidth Approaching the Homogeneous Limit in 
MoS2
-Based van der Waals Heterostructures

F. Cadiz; E. Courtade; C. Robert; G. Wang; Y. Shen; H. Cai; T. Taniguchi; K. Watanabe; H. Carrere; D. Lagarde; M. Manca; T. Amand; P. Renucci; S. Tongay; X. Marie; B. Urbaszek; F. Cadiz; E. Courtade; C. Robert; G. Wang; Y. Shen; H. Cai; T. Taniguchi; K. Watanabe; H. Carrere; D. Lagarde; M. Manca; T. Amand; P. Renucci; S. Tongay; X. Marie; B. Urbaszek

doi:10.1103/physrevx.7.021026

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Excitonic Linewidth Approaching the Homogeneous Limit in MoS2 -Based van der Waals Heterostructures

F. Cadiz, E. Courtade, C. Robert, G. Wang, Y. Shen, H. Cai, T. Taniguchi, K. Watanabe, H. Carrere, D. Lagarde, M. Manca, T. Amand, P. Renucci, S. Tongay, X. Marie, B. Urbaszek.

Physical Review X 7 [2] 021026. 2017.

https://doi.org/10.1103/physrevx.7.021026

Open Access American Physical Society (APS) (Publisher) Materials Data Repository (MDR)

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MDRavailable Excitonic Linewidth Approaching the Homogeneous Limit in MoS2-Based van der Waals Heterostructures

作成時刻: 2020-03-11 03:00:20 +0900 更新時刻: 2026-09-29 05:52:01 +0900