Effect of Film Microstructure on Domain Nucleation and Intrinsic Switching in Ferroelectric Y:HfO
            <sub>2</sub>
            Thin Film Capacitors

Effect of Film Microstructure on Domain Nucleation and Intrinsic Switching in Ferroelectric Y:HfO 2 Thin Film Capacitors

著者	Pratyush Buragohain, Adam Erickson, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo, Alexei Gruverman.
掲載誌名	Advanced Functional Materials 32 [9] 2108876 ISSN: 16163028, 1616301X ESIでのカテゴリ: MATERIALS SCIENCE
出版社	Wiley
発表年	2022
言語	English
DOI	https://doi.org/10.1002/adfm.202108876
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