Effect of Film Microstructure on Domain Nucleation and Intrinsic Switching in Ferroelectric Y:HfO <sub>2</sub> Thin Film Capacitors | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Effect of Film Microstructure on Domain Nucleation and Intrinsic Switching in Ferroelectric Y:HfO ₂ Thin Film Capacitors

Pratyush Buragohain, Adam Erickson, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo, Alexei Gruverman.

Advanced Functional Materials 32 [9] 2108876. 2022.

https://doi.org/10.1002/adfm.202108876

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作成時刻: 2022-04-13 03:24:25 +0900 更新時刻: 2026-08-28 08:02:27 +0900

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