Effects of dopants in InO<sub>x</sub>-based amorphous oxide semiconductors for thin-film transistor applications | SAMURAI, NIMS Researchers Directory Service

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Effects of dopants in InO_x-based amorphous oxide semiconductors for thin-film transistor applications
(Effects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications)

Shinya Aikawa, Toshihide Nabatame, Kazuhito Tsukagoshi.

Applied Physics Letters 103 [17] 172105. 2013.

https://doi.org/10.1063/1.4822175

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2016-05-24 17:11:33 +0900 Updated at: 2026-10-30 07:32:19 +0900

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