Effects of dopants in InO<sub>x</sub>-based amorphous oxide semiconductors for thin-film transistor applications | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Effects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications
(Effects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications)

Shinya Aikawa, Toshihide Nabatame, Kazuhito Tsukagoshi.

Applied Physics Letters 103 [17] 172105. 2013.

https://doi.org/10.1063/1.4822175

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作成時刻: 2016-05-24 17:11:33 +0900更新時刻: 2024-03-31 14:52:33 +0900

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