Direct energy conversion using Ni/SiC Schottky junction in <sup>237</sup>Np and <sup>241</sup>Am gamma ray regions

Tatsuo Fukuda; Masaaki Kobata; Takahisa Shobu; Kenji Yoshii; Junichiro Kamiya; Yosuke Iwamoto; Takahiro Makino; Yuichi Yamazaki; Takeshi Ohshima; Yasuhiro Shirai; Tsuyoshi Yaita; Tatsuo Fukuda; Masaaki Kobata; Takahisa Shobu; Kenji Yoshii; Junichiro Kamiya; Yosuke Iwamoto; Takahiro Makino; Yuichi Yamazaki; Takeshi Ohshima; Yasuhiro Shirai; Tsuyoshi Yaita

doi:10.1063/5.0099136

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Direct energy conversion using Ni/SiC Schottky junction in ²³⁷Np and ²⁴¹Am gamma ray regions

Tatsuo Fukuda, Masaaki Kobata, Takahisa Shobu, Kenji Yoshii, Junichiro Kamiya, Yosuke Iwamoto, Takahiro Makino, Yuichi Yamazaki, Takeshi Ohshima, Yasuhiro Shirai, Tsuyoshi Yaita.

Journal of Applied Physics 132 [24] 245102. 2022.

https://doi.org/10.1063/5.0099136

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白井康裕

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2023-01-18 03:34:19 +0900更新時刻: 2025-01-09 08:50:48 +0900

Direct energy conversion using Ni/SiC Schottky junction in 237Np and 241Am gamma ray regions

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

Direct energy conversion using Ni/SiC Schottky junction in ²³⁷Np and ²⁴¹Am gamma ray regions