Tatsuo Fukuda; Masaaki Kobata; Takahisa Shobu; Kenji Yoshii; Junichiro Kamiya; Yosuke Iwamoto; Takahiro Makino; Yuichi Yamazaki; Takeshi Ohshima; Tsuyoshi Yaita; Tatsuo Fukuda; Masaaki Kobata; Takahisa Shobu; Kenji Yoshii; Junichiro Kamiya; Yosuke Iwamoto; Takahiro Makino; Yuichi Yamazaki; Takeshi Ohshima; Yasuhiro Shirai; Tsuyoshi Yaita; Tatsuo Fukuda; Masaaki Kobata; Takahisa Shobu; Kenji Yoshii; Junichiro Kamiya; Yosuke Iwamoto; Takahiro Makino; Yuichi Yamazaki; Takeshi Ohshima; Tsuyoshi Yaita

doi:10.1063/5.0099136

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Direct energy conversion using Ni/SiC Schottky junction in ²³⁷Np and ²⁴¹Am gamma ray regions

Tatsuo Fukuda, Masaaki Kobata, Takahisa Shobu, Kenji Yoshii, Junichiro Kamiya, Yosuke Iwamoto, Takahiro Makino, Yuichi Yamazaki, Takeshi Ohshima, Yasuhiro Shirai, Tsuyoshi Yaita, Tatsuo Fukuda, Masaaki Kobata, Takahisa Shobu, Kenji Yoshii, Junichiro Kamiya, Yosuke Iwamoto, Takahiro Makino, Yuichi Yamazaki, Takeshi Ohshima, Tsuyoshi Yaita.

Journal of Applied Physics 132 [24] 245102. 2022.

https://doi.org/10.1063/5.0099136

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白井康裕

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2023-01-18 03:34:19 +0900更新時刻: 2024-09-05 09:07:54 +0900

Direct energy conversion using Ni/SiC Schottky junction in 237Np and 241Am gamma ray regions

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

Direct energy conversion using Ni/SiC Schottky junction in ²³⁷Np and ²⁴¹Am gamma ray regions