Direct energy conversion using Ni/SiC Schottky junction in <sup>237</sup>Np and <sup>241</sup>Am gamma ray regions

Tatsuo Fukuda; Masaaki Kobata; Takahisa Shobu; Kenji Yoshii; Junichiro Kamiya; Yosuke Iwamoto; Takahiro Makino; Yuichi Yamazaki; Takeshi Ohshima; Yasuhiro Shirai; Tsuyoshi Yaita; Tatsuo Fukuda; Masaaki Kobata; Takahisa Shobu; Kenji Yoshii; Junichiro Kamiya; Yosuke Iwamoto; Takahiro Makino; Yuichi Yamazaki; Takeshi Ohshima; Yasuhiro Shirai; Tsuyoshi Yaita

doi:10.1063/5.0099136

Direct energy conversion using Ni/SiC Schottky junction in 237Np and 241Am gamma ray regions

Tatsuo Fukuda, Masaaki Kobata, Takahisa Shobu, Kenji Yoshii, Junichiro Kamiya, Yosuke Iwamoto, Takahiro Makino, Yuichi Yamazaki, Takeshi Ohshima, Yasuhiro Shirai, Tsuyoshi Yaita.

Journal of Applied Physics 132 [24] 245102. 2022.

https://doi.org/10.1063/5.0099136

NIMS author(s)

SHIRAI, Yasuhiro

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2023-01-18 03:34:19 +0900Updated at: 2024-04-20 03:00:43 +0900