Quantum Hall Effect in Electron-Doped Black Phosphorus Field-Effect Transistors

Fangyuan Yang; Zuocheng Zhang; Nai Zhou Wang; Guo Jun Ye; Wenkai Lou; Xiaoying Zhou; Kenji Watanabe; Takashi Taniguchi; Kai Chang; Xian Hui Chen; Yuanbo Zhang; Fangyuan Yang; Zuocheng Zhang; Nai Zhou Wang; Guo Jun Ye; Wenkai Lou; Xiaoying Zhou; Kenji Watanabe; Takashi Taniguchi; Kai Chang; Xian Hui Chen; Yuanbo Zhang

doi:10.1021/acs.nanolett.8b03267

Quantum Hall Effect in Electron-Doped Black Phosphorus Field-Effect Transistors

Fangyuan Yang, Zuocheng Zhang, Nai Zhou Wang, Guo Jun Ye, Wenkai Lou, Xiaoying Zhou, Kenji Watanabe, Takashi Taniguchi, Kai Chang, Xian Hui Chen, Yuanbo Zhang.

Nano Letters 18 [10] 6611-6616. 2018.

https://doi.org/10.1021/acs.nanolett.8b03267

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2019-03-04 09:37:17 +0900Updated at: 2024-09-05 05:57:46 +0900