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Demonstration of β-(Al x Ga1− x )2O3/β-Ga2O3 modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy

著者Elaheh Ahmadi, Onur S. Koksaldi, Xun Zheng, Tom Mates, Yuichi Oshima, Umesh K. Mishra, James S. Speck.
掲載誌名Applied Physics Express 10 [7] 071101
ISSN: 18820786, 18820778, 09538984
ESIでのカテゴリ: PHYSICS
出版社Japan Society of Applied Physics
発表年2017
言語English
DOIhttps://doi.org/10.7567/apex.10.071101
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