Demonstration of β-(Al x Ga1− x )2O3/β-Ga2O3 modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy (プラズマMBEによるGeドープβ-(AlxGa1-x)2O3/β-Ga2O3 MODFET)
Elaheh Ahmadi, Onur S. Koksaldi, Xun Zheng, Tom Mates, Yuichi Oshima, Umesh K. Mishra, James S. Speck.