SAMURAI - NIMS Researchers Database

HOME > Article > Detail

Demonstration of β-(Al x Ga1− x )2O3/β-Ga2O3 modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy
(プラズマMBEによるGeドープβ-(AlxGa1-x)2O3/β-Ga2O3 MODFET)

Elaheh Ahmadi, Onur S. Koksaldi, Xun Zheng, Tom Mates, Yuichi Oshima, Umesh K. Mishra, James S. Speck.
Applied Physics Express 10 [7] 071101. 2017.

NIMS author(s)


Fulltext and dataset(s) on Materials Data Repository (MDR)


    Created at :2017-06-30 22:33:04 +0900 Updated at :2020-11-16 22:30:04 +0900

    ▲ Go to the top of this page