Gate-tunable non-volatile photomemory effect in MoS2 transistors

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Andreij C Gadelha, Alisson R Cadore, Kenji Watanabe, Takashi Taniguchi, Ana M de Paula, Leandro M Malard, Rodrigo G Lacerda, Leonardo C Campos.

2D Materials 6 [2] 025036. 2019.

作成時刻: 2019-04-03 03:00:21 +0900更新時刻: 2024-03-31 02:07:05 +0900