Nanoscale Trapping of Interlayer Excitons in a 2D Semiconductor Heterostructure

Daniel N. Shanks; Fateme Mahdikhanysarvejahany; Christine Muccianti; Adam Alfrey; Michael R. Koehler; David G. Mandrus; Takashi Taniguchi; Kenji Watanabe; Hongyi Yu; Brian J. LeRoy; John R. Schaibley

doi:10.1021/acs.nanolett.1c01215

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Nanoscale Trapping of Interlayer Excitons in a 2D Semiconductor Heterostructure

Daniel N. Shanks, Fateme Mahdikhanysarvejahany, Christine Muccianti, Adam Alfrey, Michael R. Koehler, David G. Mandrus, Takashi Taniguchi, Kenji Watanabe, Hongyi Yu, Brian J. LeRoy, John R. Schaibley.

Nano Letters 21 [13] 5641-5647. 2021.

https://doi.org/10.1021/acs.nanolett.1c01215

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Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2021-08-10 03:00:18 +0900更新時刻: 2024-05-01 07:48:48 +0900