Daniel N. Shanks; Fateme Mahdikhanysarvejahany; Christine Muccianti; Adam Alfrey; Michael R. Koehler; David G. Mandrus; Takashi Taniguchi; Kenji Watanabe; Hongyi Yu; Brian J. LeRoy; John R. Schaibley

doi:10.1021/acs.nanolett.1c01215

Nanoscale Trapping of Interlayer Excitons in a 2D Semiconductor Heterostructure

著者	Daniel N. Shanks, Fateme Mahdikhanysarvejahany, Christine Muccianti, Adam Alfrey, Michael R. Koehler, David G. Mandrus, Takashi Taniguchi, Kenji Watanabe, Hongyi Yu, Brian J. LeRoy, John R. Schaibley.
掲載誌名	Nano Letters 21 [13] 5641-5647 ISSN: 15306984 ESIでのカテゴリ: PHYSICS
出版社	American Chemical Society (ACS)
発表年	2021
言語	English
DOI	https://doi.org/10.1021/acs.nanolett.1c01215
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