Nanoscale Trapping of Interlayer Excitons in a 2D Semiconductor Heterostructure

Daniel N. Shanks; Fateme Mahdikhanysarvejahany; Christine Muccianti; Adam Alfrey; Michael R. Koehler; David G. Mandrus; Takashi Taniguchi; Kenji Watanabe; Hongyi Yu; Brian J. LeRoy; John R. Schaibley; Daniel N. Shanks; Fateme Mahdikhanysarvejahany; Christine Muccianti; Adam Alfrey; Michael R. Koehler; David G. Mandrus; Takashi Taniguchi; Kenji Watanabe; Hongyi Yu; Brian J. LeRoy; John R. Schaibley

doi:10.1021/acs.nanolett.1c01215

HOME > 論文 > 書誌詳細

Nanoscale Trapping of Interlayer Excitons in a 2D Semiconductor Heterostructure

Daniel N. Shanks, Fateme Mahdikhanysarvejahany, Christine Muccianti, Adam Alfrey, Michael R. Koehler, David G. Mandrus, Takashi Taniguchi, Kenji Watanabe, Hongyi Yu, Brian J. LeRoy, John R. Schaibley.

Nano Letters 21 [13] 5641-5647. 2021.

https://doi.org/10.1021/acs.nanolett.1c01215

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2021-08-10 03:00:18 +0900 更新時刻: 2026-10-30 07:50:40 +0900