p-Type Conversion of WS<sub>2</sub> and WSe<sub>2</sub> by Position-Selective Oxidation Doping and Its Application in Top Gate Transistors | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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p-Type Conversion of WS₂ and WSe₂ by Position-Selective Oxidation Doping and Its Application in Top Gate Transistors

Ryoichi Kato, Haruki Uchiyama, Tomonori Nishimura, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Edward Chen, Kosuke Nagashio.

ACS Applied Materials & Interfaces 15 [22] 26977-26984. 2023.

https://doi.org/10.1021/acsami.3c04052

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作成時刻: 2023-06-30 03:28:44 +0900 更新時刻: 2026-10-08 08:44:17 +0900

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