Layer- and gate-tunable spin-orbit coupling in a high-mobility few-layer semiconductor

Dmitry Shcherbakov; Petr Stepanov; Shahriar Memaran; Yaxian Wang; Yan Xin; Jiawei Yang; Kaya Wei; Ryan Baumbach; Wenkai Zheng; Kenji Watanabe; Takashi Taniguchi; Marc Bockrath; Dmitry Smirnov; Theo Siegrist; Wolfgang Windl; Luis Balicas; Chun Ning Lau; Dmitry Shcherbakov; Petr Stepanov; Shahriar Memaran; Yaxian Wang; Yan Xin; Jiawei Yang; Kaya Wei; Ryan Baumbach; Wenkai Zheng; Kenji Watanabe; Takashi Taniguchi; Marc Bockrath; Dmitry Smirnov; Theo Siegrist; Wolfgang Windl; Luis Balicas; Chun Ning Lau

doi:10.1126/sciadv.abe2892

Layer- and gate-tunable spin-orbit coupling in a high-mobility few-layer semiconductor

Dmitry Shcherbakov, Petr Stepanov, Shahriar Memaran, Yaxian Wang, Yan Xin, Jiawei Yang, Kaya Wei, Ryan Baumbach, Wenkai Zheng, Kenji Watanabe, Takashi Taniguchi, Marc Bockrath, Dmitry Smirnov, Theo Siegrist, Wolfgang Windl, Luis Balicas, Chun Ning Lau.

Science Advances 7 [5] . 2021.

https://doi.org/10.1126/sciadv.abe2892

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2021-02-11 03:00:14 +0900Updated at: 2024-03-31 13:08:25 +0900