High-field 
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>1</mml:mn><mml:mo>/</mml:mo><mml:mi>f</mml:mi></mml:mrow></mml:math>
 noise in hBN-encapsulated graphene transistors

A. Schmitt; D. Mele; M. Rosticher; T. Taniguchi; K. Watanabe; C. Maestre; C. Journet; V. Garnier; G. Fève; J. M. Berroir; C. Voisin; B. Plaçais; E. Baudin; A. Schmitt; D. Mele; M. Rosticher; T. Taniguchi; K. Watanabe; C. Maestre; C. Journet; V. Garnier; G. Fève; J. M. Berroir; C. Voisin; B. Plaçais; E. Baudin

doi:10.1103/physrevb.107.l161104

HOME > 論文 > 書誌詳細

High-field 1/f noise in hBN-encapsulated graphene transistors

A. Schmitt, D. Mele, M. Rosticher, T. Taniguchi, K. Watanabe, C. Maestre, C. Journet, V. Garnier, G. Fève, J. M. Berroir, C. Voisin, B. Plaçais, E. Baudin.

Physical Review B 107 [16] L161104. 2023.

https://doi.org/10.1103/physrevb.107.l161104

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2025-11-18 03:10:08 +0900 更新時刻: 2026-09-28 05:55:04 +0900