Correlation-Driven Electron-Hole Asymmetry in Graphene Field Effect Devices

Nicholas Dale; Ryo Mori; M. Iqbal Bakti Utama; Jonathan D. Denlinger; Conrad Stansbury; Claudia G. Fatuzzo; Sihan Zhao; Kyunghoon Lee; Takashi Taniguchi; Kenji Watanabe; Chris Jozwiak; Aaron Bostwick; Eli Rotenberg; Roland J. Koch; Feng Wang; Alessandra Lanzara

doi:10.1038/s41535-021-00404-8

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Correlation-driven electron-hole asymmetry in graphene field effect devices
(Correlation-Driven Electron-Hole Asymmetry in Graphene Field Effect Devices)

Nicholas Dale, Ryo Mori, M. Iqbal Bakti Utama, Jonathan D. Denlinger, Conrad Stansbury, Claudia G. Fatuzzo, Sihan Zhao, Kyunghoon Lee, Takashi Taniguchi, Kenji Watanabe, Chris Jozwiak, Aaron Bostwick, Eli Rotenberg, Roland J. Koch, Feng Wang, Alessandra Lanzara.

npj Quantum Materials 7 [1] 9. 2022.

https://doi.org/10.1038/s41535-021-00404-8

Open Access Springer Science and Business Media LLC (Publisher)

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2022-02-15 03:10:08 +0900更新時刻: 2024-03-31 16:24:23 +0900

Correlation-driven electron-hole asymmetry in graphene field effect devices(Correlation-Driven Electron-Hole Asymmetry in Graphene Field Effect Devices)

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

Correlation-driven electron-hole asymmetry in graphene field effect devices
(Correlation-Driven Electron-Hole Asymmetry in Graphene Field Effect Devices)