We fabricated a two-terminal resistive switching device using a copper iodide (CuI), which is a mixed conductor, thin film sandwiched between Cu and Pt electrodes. Under a voltage sweep between the electrodes, the device initially exhibits digital (on/off) resistive switching, but eventually transitions to stable analog resistive switching behavior. This analog resistive device (memristor) exhibits various synaptic plasticity behaviors, and image recognition accuracy, calculated using synaptic potentiation/depression behavior, achieved a high value of 93%. These results suggest that the analog memristor using mixed conductors hold promise as artificial synapses in neuromorphic computing.

Created at: 2025-06-11 03:06:51 +0900 Updated at: 2026-10-29 06:00:25 +0900