HOME > 論文 > 書誌詳細Electrical characterization of phosphorus-doped n-type homoepitaxial diamond layers by Schottky barrier diodesMariko Suzuki, Hiroaki Yoshida, Naoshi Sakuma, Tomio Ono, Tadashi Sakai, Satoshi Koizumi. Applied Physics Letters 84 [13] 2349-2351. 2004.https://doi.org/10.1063/1.1695206 NIMS著者小泉 聡Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 14:37:58 +0900更新時刻: 2024-03-29 20:41:21 +0900
