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Electrical characterization of phosphorus-doped n-type homoepitaxial diamond layers by Schottky barrier diodes

Mariko Suzuki, Hiroaki Yoshida, Naoshi Sakuma, Tomio Ono, Tadashi Sakai, Satoshi Koizumi.
Applied Physics Letters 84 [13] 2349-2351. 2004.
https://doi.org/10.1063/1.1695206

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