HOME > 論文 > 書誌詳細Detection of misfit dislocations at interface of strained Si/Si0.8Ge0.2 by electron-beam-induced current techniqueX. L. Yuan, T. Sekiguchi, S. G. Ri, S. Ito. Applied Physics Letters 84 [17] 3316-3318. 2004.https://doi.org/10.1063/1.1734688 NIMS著者Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 12:03:46 +0900更新時刻: 2024-03-29 19:44:08 +0900
