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Detection of misfit dislocations at interface of strained Si/Si0.8Ge0.2 by electron-beam-induced current technique

X. L. Yuan, T. Sekiguchi, S. G. Ri, S. Ito.
Applied Physics Letters 84 [17] 3316-3318. 2004.
https://doi.org/10.1063/1.1734688

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