HOME > 論文 > 書誌詳細Resistance random access memory performance of MgZnO-based device with varying film thickness by an asymmetric electrode of Au/ITOZilong Zhang, Keyun Gu, Xinyu Zhou, Haofei Huang, Jian Huang, Ke Tang, Jieyu Zhang, Meiyong Liao, Linjun Wang. Materialia 15 101001. 2021.https://doi.org/10.1016/j.mtla.2021.101001 NIMS著者廖 梅勇Materials Data Repository (MDR)上の本文・データセット作成時刻: 2021-01-21 03:00:18 +0900更新時刻: 2024-09-12 05:13:02 +0900
