Resistance random access memory performance of MgZnO-based device with varying film thickness by an asymmetric electrode of Au/ITO | SAMURAI, NIMS Researchers Directory Service

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Resistance random access memory performance of MgZnO-based device with varying film thickness by an asymmetric electrode of Au/ITO

Zilong Zhang, Keyun Gu, Xinyu Zhou, Haofei Huang, Jian Huang, Ke Tang, Jieyu Zhang, Meiyong Liao, Linjun Wang.

Materialia 15 101001. 2021.

https://doi.org/10.1016/j.mtla.2021.101001

NIMS author(s)

LIAO, Meiyong

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2021-01-21 03:00:18 +0900 Updated at: 2026-10-08 05:07:04 +0900

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