HOME > 論文 > 書誌詳細Atomic-scale characterization of highly doped Si impurities in GaAs using scanning tunneling microscopyNobuyuki Ishida, Takaaki Mano, Takeshi Noda. Applied Surface Science 583 152373. 2022.https://doi.org/10.1016/j.apsusc.2021.152373 NIMS著者石田 暢之間野 高明野田 武司Materials Data Repository (MDR)上の本文・データセット作成時刻: 2022-01-26 10:06:43 +0900更新時刻: 2024-04-02 05:10:52 +0900
