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Role of nitrogen incorporation into Hf-based high-k gate dielectrics for termination of local current leakage paths

Heiji Watanabe, S.Kamiyama , UMEZAWA, Naoto, SHIRAISHI, Kenji, S.Yoshida, Y.Watanabe, Tsunetoshi　Arikado, CHIKYOW, Toyohiro, YAMADA, Keisaku, K.Yasutake.
JAPANESE JOURNAL OF APPLIED PHYSICS 44 [42-45] L1333-L1336. 2005.

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