HOME > 論文 > 書誌詳細Role of nitrogen incorporation into Hf-based high-k gate dielectrics for termination of local current leakage paths Heiji Watanabe, S.Kamiyama , UMEZAWA, Naoto, SHIRAISHI, Kenji, S.Yoshida, Y.Watanabe, Tsunetoshi Arikado, CHIKYOW, Toyohiro, YAMADA, Keisaku, K.Yasutake. JAPANESE JOURNAL OF APPLIED PHYSICS 44 [42-45] L1333-L1336. 2005.NIMS著者知京 豊裕Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 14:54:45 +0900更新時刻: 2018-12-15 01:46:10 +0900
