HOME > Profile > TANIGUCHI, Takashi
- Address
- 305-0044 1-1 Namiki Tsukuba Ibaraki JAPAN [Access]
Research
- Keywords
High pressure, Crystal growth, Superhard materials
PublicationsNIMS affiliated publications since 2004.
Research papers
- Petr Stepanov, Shi Che, Dmitry Shcherbakov, Jiawei Yang, Ruoyu Chen, Kevin Thilahar, Greyson Voigt, Marc W. Bockrath, Dmitry Smirnov, TANIGUCHI, Takashi, WATANABE, Kenji, Roger K. Lake, Yafis Barlas, Allan H. MacDonald, Chun Ning Lau. Long-distance spin transport through a graphene quantum Hall antiferromagnet. NATURE PHYSICS. 14 [9] (2018) 907-911 10.1038/s41567-018-0161-5
- Martin V. Gustafsson, Matthew Yankowitz, Carlos Forsythe, Daniel Rhodes, WATANABE, Kenji, TANIGUCHI, Takashi, James Hone, Xiaoyang Zhu, Cory R. Dean. Ambipolar Landau levels and strong band-selective carrier interactions in monolayer WSe2. NATURE MATERIALS. 17 [5] (2018)
- Juan D. Albar, Vladimir V. Korolkov, Matteo Baldoni, WATANABE, Kenji, TANIGUCHI, Takashi, Elena Besley, Peter H. Beton. Adsorption of Hexacontane on Hexagonal Boron Nitride. JOURNAL OF PHYSICAL CHEMISTRY C. 122 [48] (2018) 27575-27581 10.1021/acs.jpcc.8b10167
Proceedings
- Ji-Yun Moon, Minsoo Kim, Seung-Il Kim, Shuigang Xu, Jun-Hui Choi, Dongmok Whang, Kenji Watanabe, Takashi Taniguchi, Dong Seop Park, Juyeon Seo, Sung Ho Cho, Seok-Kyun Son, Jae-Hyun Lee. Layer-engineered large-area exfoliation of graphene. Science Advances. 2020, eabc6601-1-eabc6601-7
- Manfred Ersfeld, Frank Volmer, Lars Rathmann, Luca Kotewitz, Maximilian Heithoff, Mark Lohmann, Bowen Yang, Kenji Watanabe, Takashi Taniguchi, Ludwig Bartels, Jing Shi, Christoph Stampfer, Bernd Beschoten. Valley lifetimes of conduction band electrons in monolayer WSe2. Proceedings of SPIE - The International Society for Optical Engineering. 2020
- M. Zinkiewicz, K. Nogajewski, M. Bartos, K. Watanabe, T. Taniguchi, M. Potemski, A. Babiński, M.R. Molas. Emission Excitation Spectroscopy in WS2 Monolayer Encapsulated in Hexagonal BN. Acta Physica Polonica A. 2019, 624-627
Presentations
- KURODA, Takashi, Yusuke Hoshi, WATANABE, Kenji, TANIGUCHI, Takashi, Ryo Kitaura, Tomoki Machida. Dark-state impact on the exciton recombination of monolayer WS2 embedded in van der Waals heterostructures. 2020 International Conference on Solid State Devices and Materials (SSDM2020). 2020
- 岩崎 拓哉, 中払 周, 若山 裕, 渡邊 賢司, 谷口 尚, 守田 佳史, 森山 悟士. モアレ超格子二重量子ドット素子における量子ホール効果と単一キャリア輸送特性. 日本物理学会2020年秋季大会. 2020
- 加藤 拓, 伊藤 博仁, 岩崎 拓哉, 渡邊 賢司, 谷口 尚, 森山 悟士, 羽田野 剛司. 垂直磁場下における4層グラフェン量子ドットデバイスの電気伝導特性. 第81回応用物理学会秋季学術講演会. 2020
Misc
- 笹間 陽介, 小松 克伊, 森山 悟士, 井村 将隆, 寺地 徳之, 渡邊 賢司, 谷口 尚, 内橋 隆, 山口 尚秀. hBNヘテロ界面を用いた高移動度ダイヤモンド電界効果トランジスタ. NEW DIAMOND. (2019) 9-15
- Sudipta Dubey, Simone Lisi, Goutham Nayak, Felix Herziger, Van-Dung Nguyen, Toai Le Quang, Vladimir Cherkez, César González, Yannick J. Dappe, WATANABE, Kenji, TANIGUCHI, Takashi, Laurence Magaud, Pierre Mallet, Jean-Yves Veuillen, Raul Arenal, Laëtitia Marty, Julien Renard, Nedjma Bendiab, Johann Coraux, Vincent Bouchiat. Correction to Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS2 in the Presence of Defects, Strain, and Charged Impurities. ACS NANO. (2018) 10565-10566
- 渡邊 賢司, 谷口 尚. グラフェンに電子のささやき回廊モードを生成しプローブする. サイエンス誌に載った日本人研究者 Japanese Scientists in Science 2015. 2016issue (2016) 33-33
Patents
- No. 5183256 切削工具とこれを用いた切削方法 (2013)
- No. 6061338 六方晶窒化タングステンの合成方法 (2016)
- No. 4863461 六方晶窒化ホウ素結晶体を製造する方法 (2011)