HOME > Profile > TANIGUCHI, Takashi
- Address
- 305-0044 1-1 Namiki Tsukuba Ibaraki JAPAN [Access]
Research
- Keywords
High pressure, Crystal growth, Superhard materials
PublicationsNIMS affiliated publications since 2004.
Research papers
- Taiki Hirahara, Takushi Oka, Ryoya Ebisuoka, Tomoaki Nakasuga, Shingo Tajima, WATANABE, Kenji, TANIGUCHI, Takashi, Ryuta Yagi. Multilayer graphene shows intrinsic resistance peaks in the carrier density dependence. SCIENTIFIC REPORTS. 8 (2018)
- Sergio Pezzini, Vaidotas Mišeikis, Simona Pace, Francesco Rossella, Kenji Watanabe, Takashi Taniguchi, Camilla Coletti. High-quality electrical transport using scalable CVD graphene. 2D Materials. 7 [4] (2020) 041003 10.1088/2053-1583/aba645
- Biswajit Datta, Amulya Ratnakar, Hitesh Agarwal, Abhisek Samanta, WATANABE, Kenji, TANIGUCHI, Takashi, Rajdeep Sensarma, Mandar M. Deshmukh. Landau level diagram and the continuous rotational symmetry breaking in trilayer graphene. PHYSICAL REVIEW LETTERS. 121 [5] (2018)
Proceedings
- Ji-Yun Moon, Minsoo Kim, Seung-Il Kim, Shuigang Xu, Jun-Hui Choi, Dongmok Whang, Kenji Watanabe, Takashi Taniguchi, Dong Seop Park, Juyeon Seo, Sung Ho Cho, Seok-Kyun Son, Jae-Hyun Lee. Layer-engineered large-area exfoliation of graphene. Science Advances. 2020, eabc6601-1-eabc6601-7
- Manfred Ersfeld, Frank Volmer, Lars Rathmann, Luca Kotewitz, Maximilian Heithoff, Mark Lohmann, Bowen Yang, Kenji Watanabe, Takashi Taniguchi, Ludwig Bartels, Jing Shi, Christoph Stampfer, Bernd Beschoten. Valley lifetimes of conduction band electrons in monolayer WSe2. Proceedings of SPIE - The International Society for Optical Engineering. 2020
- M. Zinkiewicz, K. Nogajewski, M. Bartos, K. Watanabe, T. Taniguchi, M. Potemski, A. Babiński, M.R. Molas. Emission Excitation Spectroscopy in WS2 Monolayer Encapsulated in Hexagonal BN. Acta Physica Polonica A. 2019, 624-627
Presentations
Misc
- 笹間 陽介, 小松 克伊, 森山 悟士, 井村 将隆, 寺地 徳之, 渡邊 賢司, 谷口 尚, 内橋 隆, 山口 尚秀. hBNヘテロ界面を用いた高移動度ダイヤモンド電界効果トランジスタ. NEW DIAMOND. (2019) 9-15
- Sudipta Dubey, Simone Lisi, Yannick J. Dappe, Van-Dung Nguyen, Toai Le Quang, Vladimir Cherkez, César González, Goutham Nayak, WATANABE, Kenji, Felix Herziger, TANIGUCHI, Takashi, Laurence Magaud, Pierre Mallet, Jean-Yves Veuillen, Raul Arenal, Laëtitia Marty, Julien Renard, Nedjma Bendiab, Johann Coraux, Vincent Bouchiat. Correction to Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS2 in the Presence of Defects, Strain, and Charged Impurities. ACS NANO. (2018) 10565-10566
- WATANABE, Kenji, TANIGUCHI, Takashi. グラフェンに電子のささやき回廊モードを生成しプローブする. サイエンス誌に載った日本人研究者 Japanese Scientists in Science 2015. 2016issue (2016) 33-33
Patents
- No. 5183256 切削工具とこれを用いた切削方法 (2013)
- No. 6061338 六方晶窒化タングステンの合成方法 (2016)
- No. 4863461 六方晶窒化ホウ素結晶体を製造する方法 (2011)
- No: 2008007388 六方晶窒化ホウ素結晶体を製造する方法 (2008)
- No: 2005228886 深紫外線固体発光素子 (2005)
- No: 2005145788 高輝度紫外線発光六方晶窒化ホウ素単結晶とその製造方法及び高輝度紫外線発光素子 (2005)