HOME > 会議録 > 書誌詳細Electrical Properties of Diamond MISFETs with Submicron-Sized Gate on Boron-Doped (111) SurfaceSaito Takeyasu, Park Kyung-ho, Hirama Kazuyuki, Umezawa Hitoshi, Satoh Mitsuya, Kawarada Hiroshi, LIU, ZHIQUAN, MITSUISHI, Kazutaka, Okushi Hideyo. Materials Research Society Symposium Proceedings 22.1-22.6. 2006.NIMS著者三石 和貴Materials Data Repository (MDR)上の本文・データセット作成時刻 :2017-02-27 01:02:42 +0900 更新時刻 :2017-03-17 03:02:46 +0900