The formation mechanism of the V3Ga phase on the high Ga contentCu-Ga compound/V diffusion reaction through the high-temperature XRD analysis | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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The formation mechanism of the V3Ga phase on the high Ga contentCu-Ga compound/V diffusion reaction through the high-temperature XRD analysis

Y. Hishinuma, A. Kikuchi, S. Murakami, K. Matsuda, H. Taniguchi, T. Takeuchi.

PHYSICS PROCEDIA 1492-1497. 2012.

https://doi.org/10.1016/j.phpro.2012.06.120

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作成時刻: 2017-02-27 02:06:56 +0900更新時刻: 2025-03-15 05:03:11 +0900

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