HOME > Proceedings > DetailThe formation mechanism of the V3Ga phase on the high Ga contentCu-Ga compound/V diffusion reaction through the high-temperature XRD analysisY. Hishinuma, A. Kikuchi, S. Murakami, K. Matsuda, H. Taniguchi, T. Takeuchi. PHYSICS PROCEDIA 1492-1497. 2012.https://doi.org/10.1016/j.phpro.2012.06.120 NIMS author(s)KIKUCHI, AkihiroTAKEUCHI, TakaoFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-02-27 02:06:56 +0900Updated at: 2024-04-01 22:24:35 +0900