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TEM characterization on the interfaces of the (111) diamond metal insulator semiconductor field effect transistor (MISFET) gate

LIU, ZHIQUAN, MITSUISHI, Kazutaka, FURUYA, Kazuo, Hirama Kazuyuki, Umezawa Hitoshi, Satoh Mitsuya, Kawarada Hiroshi, Saito Takeyasu, Okushi Hideyo, Park Kyung-ho.

NIMS author(s)


Fulltext and dataset(s) on Materials Data Repository (MDR)


    Created at: 2017-02-27 01:02:54 +0900Updated at: 2017-03-17 03:02:58 +0900

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