Physical Understanding of the Reliability Improvement of Dual High-k CMOSFETs with the Fifth Element Incorporation into HfSiON Gate Dielectrics | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Physical Understanding of the Reliability Improvement of Dual High-k CMOSFETs with the Fifth Element Incorporation into HfSiON Gate Dielectrics

Motoyuki Sato, UMEZAWA, Naoto, N. Mise, S. Kamiyama, M. Kadoshima, T. Morooka, ADACHI, Tetsuya, CHIKYOW, Toyohiro, Kikuo Yamabe, Kenji Shiraishi, Seiichi Miyazaki, Akira Uedono, Keisaku Yamada, T. Aoyama, T. Eimori, Yasuo Nara, Y. Ohji.

2008 Symposium on VLSI Technology Digest of Technical Papers 66-67. 2008.

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作成時刻: 2017-02-27 01:30:12 +0900更新時刻: 2017-03-17 03:31:41 +0900

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