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Atomic switch: Development of resistive switching memories based on nanoscale migration of cations in oxide thin films
(抵抗変化メモリ(ReRAM)の現状と展望:絶縁性ナノ薄膜型原子スイッチを中心として)


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Fulltext and dataset(s) on Materials Data Repository (MDR)


    Created at: 2017-02-27 02:08:35 +0900Updated at: 2017-03-17 04:16:32 +0900

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