HOME > 会議録 > 書誌詳細Electron-beam-induced current analysis of dislocations in strained Si/Si0.8Ge0.2Yuan, Xiaoli, SEKIGUCHI, Takashi, 李成奇, 伊藤俊. Proc. of the 4th International Symposium on Advanced Science and Technology of Silicon Materials 144-151. 2004.NIMS著者Materials Data Repository (MDR)上の本文・データセット作成時刻: 2017-02-27 00:41:58 +0900更新時刻: 2017-03-17 02:43:03 +0900
