Physical Model of the PBTI and TDDB of La Incorporated HfSiON Gate Dielectrics with Pre-existing and Stress-induced Defects
Motoyuki Sato, UMEZAWA, Naoto, J. Shimokawa, H. Arimura, S. Sugino, A. Tachibana, M. Nakamura, N. Mise, S. Kamiyama, T. Morooka, T. Eimori, Kenji Shiraishi, Kikuo Yamabe, Heiji Watanabe, Keisaku Yamada, T. Aoyama, T. Nabatame, Y. Nara, Y. Ohji.
