HOME > Presentation > Detail
AESによる非破壊計測―Si/BN多層膜
(Non-destructive AES analysis for the shallow depth doped semiconductors)
第35回表面分析研究会. June 21, 2010-June 22, 2010.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-01-08 04:12:45 +0900Updated at: 2017-07-10 20:50:43 +0900