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A Selective Growth of GaAs Microcrystals Grown on Se-Terminated GaAlAs Surface for the Quantum Well Box Structure.
(量子井戸箱作製を目的としたSe終端GaAlAs表面上でのGa液滴からのGaAs微結晶の選択成長.)
Material Research Society. November 30, 1992-December 04, 1992.
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Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-01-08 03:41:08 +0900 Updated at: 2023-04-09 14:56:02 +0900