HOME > Presentation > Detail
AIC法による低温多結晶シリコン薄膜形成挙動の微細構造解析
(Microstructural Analysis of the formation behavior of polycrystalline silicon thin films during the aluminum induced crystallization (AIC))
電子情報通信学会 シリコン材料・デバイス研究会. April 11, 2008-April 12, 2008.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-01-08 03:28:56 +0900 Updated at: 2017-07-10 20:24:26 +0900