HOME > Presentation > Detail(Electronic properties of LaNiO3 Mott interfaces via hard X-ray photoemission)A. Gray, J. Son, J. M. LeBeau, 上田 茂典, 山下 良之, C. J. Powell, S. Stemmer, C. S. Fadley. VUVX 2010. 2010.NIMS author(s)UEDA, ShigenoriYAMASHITA, YoshiyukiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-02-14 10:51:32 +0900Updated at: 2017-07-10 20:51:44 +0900