HOME > Presentation > Detail
高密度Ga液滴エピタキシー法により作成したInGaAs量子ドットの発光特性
(Dhotolaminescence Study of InGaAs quanfum dots fabricated by droplet epitaxy with highly donse Gadroplets)
第１８回電子材料シンポジウム. June 30, 1999-July 02, 1999.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-18 01:42:12 +0900 Updated at: 2017-07-10 17:56:00 +0900