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MOCVD法によるInP基板上のInAs量子ドットの形成メカニズムと発光波長制御
(Growth mechanism and emission wavelength control of InAs QDs on InP substrate grown by MOCVD)
第65回応用物理学関係連合講演会. September 01, 2004-September 04, 2004. Invited
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-01-08 04:02:02 +0900 Updated at: 2024-03-05 11:40:13 +0900