HOME > Presentation > Detail
(Electronic structure of newly discovered Yb-compounds YbNi3X9 (X= Al, Ga) studied by hard x-ray photoemission spectroscopy)
HAXPES 2011. September 14, 2011-September 16, 2011.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-14 11:00:26 +0900 Updated at: 2017-07-10 21:07:22 +0900