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Study of SiO2 Interfacial Layer Growth during Fabrication Process of Ferroelectric HfxZr1−xO2-Based Metal-Ferroelectric-Semiconductor
240th ECS Meeting / https://www.electrochem.org/240/. October 10, 2021-October 14, 2021.
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Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2021-10-28 03:35:37 +0900 Updated at: 2021-10-28 03:35:37 +0900